Reduction of hafnium oxide and hafnium silicate by rhenium and platinum
نویسندگان
چکیده
منابع مشابه
Microstructure and optical properties of Pr3+-doped hafnium silicate films
In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...
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L.V. Goncharova,1,* M. Dalponte,1 T. Feng,1 T. Gustafsson,1 E. Garfunkel,2 P.S. Lysaght,3 and G. Bersuker3 1Departments of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA 2Department of Chemistry and Chemical Biology, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA 3Sematech, Austin, Texas 78741, USA (Received 30...
متن کاملComment on “Oxidation of Hafnium and Diffusion of Hafnium Atoms
In his paper, Chandi C. Dey reports on the measurement of the nuclear quadrupole interaction of 181Hf(β−)181Ta in α-Hf metal with a few percent zirconium heated in air by perturbed angular correlation (PAC) of γ-rays. Since he did not observe the formation of HfO2 up to 773 K and during initial heating at 873 K for one day, he concluded that no oxygen is absorbed. The time dependent hyperfine i...
متن کاملOxidation of Hafnium and Diffusion of Hafnium Atoms in Hexagonal Close-Packed Hafnium; Microscopic Investigations by Perturbed Angular Correlations
Time-differential perturbed angular correlation (TDPAC) studies in hafnium metal (∼ 5%Zr) have been carried out at different temperatures. It is found that hafnium metal on heating at 873 K continuously for two days in air, transforms partially and abruptly to HfO2 while no component of oxide has been observed for heating up to 773 K and during initial heating at 873 K for 1 day. This result is...
متن کاملStructure and optical properties of nanocrystalline hafnium oxide thin films
Hafnium oxide (HfO2) films were grown by sputter-deposition by varying deposition temperature (Ts) in a wide range of 25–700 C. The deposited HfO2 films were characterized by studying their growth behavior, microstructure, and optical properties. Characterization of the films employing a wide range of analytical techniques indicate a clear functional relationship between processing conditions, ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2006
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2177360